The band-edge excitons observed in few-layer NiPS3
نویسندگان
چکیده
Abstract Band-edge excitons of few-layer nickel phosphorous trisulfide (NiPS 3 ) are characterized via micro-thermal-modulated reflectance (μTR) measurements from 10 to 300 K. Prominent μTR features the A exciton series and B simultaneously detected near band edge NiPS . The contains two sharp 1 2 levels one threshold-energy-related transition (direct gap, E ∞ ), which at lower energy side In addition, broadened feature is present higher may correlate with majorly d -to- in Rydberg threshold ≅ 1.511 eV binding about 36 meV, 1.366 measured by 1.894 excitonic directly transit top valence conduction , while might originate spin-split-off edge. direct optical gap ~1.402 K, confirmed transmittance experiments.
منابع مشابه
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ژورنال
عنوان ژورنال: npj 2D materials and applications
سال: 2021
ISSN: ['2397-7132']
DOI: https://doi.org/10.1038/s41699-020-00188-8